FW349 no.8750-1/6 features motor drive application. low on-resistance. ultrahigh-speed switching. composite type with an n-channel mosfet and a p-channel mosfet driving from a 4v supply voltage contained in a single package. high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 45 --45 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 5- -4.5 a drain current (pw 10s) i d duty cycle 1% 6 --5 a drain current (pw 10 s) i dp duty cycle 1% 20 --18 a allowable power dissipation p d mounted on a ceramic board 1.8 w (1500mm 2 ? 0.8mm)1unit, pw 10s t otal dissipation p t mounted on a ceramic board 2.2 w (1500mm 2 ? 0.8mm), pw 10s channel temperature tch 150 c storage temperature tstg --55 to +150 c marking : w349 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en8750 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 82907pa ti im tc-00000835 sanyo semiconductors d ata sheet FW349 n-channel and p-channel silicon mosfets general-purpose switching device applications
FW349 no.8750-2/6 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 45 v zero-gate voltage drain current i dss v ds =45v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =5a 4.2 7.1 s r ds (on)1 i d =5a, v gs =10v 28 37 m ? static drain-to-source on-state resistance r ds (on)2 i d =3a, v gs =4v 47 66 m ? input capacitance ciss v ds =20v, f=1mhz 860 pf output capacitance coss v ds =20v, f=1mhz 105 pf reverse transfer capacitance crss v ds =20v, f=1mhz 75 pf t urn-on delay time t d (on) see specified test circuit. 14 ns rise time t r see specified test circuit. 64 ns t urn-off delay time t d (off) see specified test circuit. 60 ns fall time t f see specified test circuit. 65 ns t otal gate charge qg v ds =24v, v gs =10v, i d =5a 18.1 nc gate-to-source charge qgs v ds =24v, v gs =10v, i d =5a 2.6 nc gate-to-drain ?iller?charge qgd v ds =24v, v gs =10v, i d =5a 4.0 nc diode forward voltage v sd i s =5a, v gs =0v 0.83 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --45 v zero-gate voltage drain current i dss v ds =--45v, v gs =0v --1 a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =- -1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--4.5a 4.5 7.6 s r ds (on)1 i d =--4.5a, v gs =--10v 47 62 m ? static drain-to-source on-state resistance r ds (on)2 i d =--3a, v gs =--4v 76 106 m ? input capacitance ciss v ds =--20v, f=1mhz 1275 pf output capacitance coss v ds =--20v, f=1mhz 150 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 110 pf t urn-on delay time t d (on) see specified test circuit. 14 ns rise time t r see specified test circuit. 50 ns t urn-off delay time t d (off) see specified test circuit. 123 ns fall time t f see specified test circuit. 75 ns t otal gate charge qg v ds =--24v, v gs =- -10v, i d =--4.5a 26 nc gate-to-source charge qgs v ds =--24v, v gs =- -10v, i d =--4.5a 2.4 nc gate-to-drain ?iller?charge qgd v ds =--24v, v gs =- -10v, i d =--4.5a 5.7 nc diode forward voltage v sd i s =--4.5a, v gs =0v --0.86 --1.2 v package dimensions electrical connection unit : mm (typ) 7005-003 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 87 6 5 12 3 4 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 top view
FW349 no.8750-3/6 switching time test circuit [n-channel] [p-channel] pw=10 s d.c. 1% p. g 50 ? g s d i d =5a r l =4.8 ? v dd =24v v out FW349 v in 10v 0v v in pw=10 s d.c. 1% p. g 50 ? g s d i d = --4.5a r l =5.33 ? v dd = --24v v out FW349 v in 0v - -10v v in r ds (on) -- v gs i d -- v ds i d -- v gs r ds (on) -- ta [nch] [nch] [nch] [nch] [nch] [nch] ? y fs ? -- i d i s -- v sd gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v diode forward voltage, v sd -- v source current, i s -- a ambient temperature, ta -- c 0.01 2 0.1 7 5 3 2 10 7 5 3 2 1.0 7 5 3 20 10 40 60 80 30 50 70 90 100 1 2 3 4 5 6 7 0 -- 6 0 -- 4 0 -- 2 0 0 2 0 4 06080 100 120 140 160 0246810 12 14 16 it12876 0 10 40 70 20 50 80 30 60 90 100 1.0 0.5 2.0 3.0 4.0 1.5 2.5 3.5 4.5 5.0 0 00.40. 81.0 0.2 0.1 0.6 0.5 0.9 0.3 0.7 v gs =3v 16v it12874 00.51.01 .5 2.0 2.5 3.0 3.5 4.0 v ds =10v 25 c -- 2 5 c t a=75 c it12875 it12877 0 t a=25 c 5a i d =3a v gs =10v, i d =5a v gs =4v, i d =3a it12878 0.01 0.1 23 57 10 23 57 2 1.0 357 0.1 2 1.0 7 5 3 2 10 7 5 3 v ds =10v t a= --25 c it12879 0.2 0.4 0.6 0.8 1.0 1.2 v gs =0v - -25 c 25 c t a=75 c 75 c 5v 4v 25 c 6v 10v
FW349 no.8750-4/6 v gs -- qg a s o r ds (on) -- ta r ds (on) -- v gs i d -- v gs i d -- v ds [pch] [pch] [nch] [nch] [pch] [pch] t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v ambient temperature, ta -- c [nch] [nch] sw time -- i d ciss, coss, crss -- v ds drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf - -60 --40 --20 0 20 40 60 80 100 120 160 140 0--4--8- -12 --16 -- 2 -- 6 - -10 --14 20 40 80 60 100 140 120 160 0 20 40 80 60 100 140 120 160 0 -- 1 -- 2 -- 3 -- 4 -- 6 -- 5 0 0- -0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 0- -0.2 --0.4 --0.6 --0.8 --1.0 - -0.1 --0.3 --0.5 --0.7 --0.9 it12882 0 2 4 6 8 10 1 3 5 7 9 0510 15 20 it12886 it12887 - -0.5 - -1.0 - -1.5 - -2.0 - -2.5 - -3.0 - -3.5 - -4.5 - -4.0 0 it12884 it12885 v ds = --10v -25 c ta= 75 c v gs = --3v -- 16v -- 4v - -10v i d = --3a - -4.5a t a=25 c v ds =24v i d =5a - -5v -- 6v 25 c v gs = --4v, i d = --3.0a v gs = --10v, i d = --4.5 a 0.01 0.1 1.0 23 57 23 57 23 57 23 57 10 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 5 3 2 it12883 i dp =20a i d =5a 100ms dc operation 1ms 10ms 10s 10 s 100 s operation in this area is limited by r ds (on). 7 7 5 3 2 3 2 100 10 3 100 7 5 5 3 2 1000 7 5 3 2 t d (on) t d (off) t r t f it12880 0.1 23 57 1.0 23 57 10 0510 15 20 25 30 35 40 45 it12881 v dd =24v v gs =10v ciss coss crss f=1mhz t a=25 c single pulse mounted on a ceramic board (1500mm 2 ? 0.8mm) 1unit
FW349 no.8750-5/6 ciss, coss, crss -- v ds sw time -- i d [pch] [pch] v gs -- qg a s o [pch] [pch] p d -- ta drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w ? y fs ? -- i d i s -- v sd [pch] [pch] drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a p d (fet 1) -- p d (fet 2) [nch, pch] [nch, pch] allowable power dissipation, p d (fet 2) -- w allowable power dissipation, p d (fet 1) -- w 0510 15 20 25 30 0 -- 2 -- 4 -- 6 -- 8 - -10 -- 1 -- 3 -- 5 -- 7 -- 9 3 100 5 3 2 5 3 2 7 7 5 1000 10 100 2 7 7 5 5 5 3 2 3 - -0.1 23 57 - -1.0 23 57 - -10 0--5- -10 --15 --20 --25 --45 - -30 --35 --40 it12890 it12891 ciss coss crss f=1mhz t d (on) t d (off) t r t f v ds = --24v i d = --4.5a it12892 0204 06080100 120 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.6 2.4 2.2 2.0 1.6 1.8 it12894 1unit v dd = --24v v gs = --10v mounted on a ceramic board (1500mm 2 ? 0.8mm) pw 10s 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0 1.6 1.8 it12895 mounted on a ceramic board (1500mm 2 ? 0.8mm) pw 10s - -0.01 --0.1 --1.0 --10 23 57 23 57 23 57 - -100 23 57 - -0.01 - -0.1 - -1.0 - -10 7 5 3 2 7 5 3 2 5 3 2 7 5 3 2 it12893 100ms dc operation 100 s 1ms 10ms 10s i dp = --18a 10 s i d = --4.5a operation in this area is limited by r ds (on). it12889 2 - -0.01 - -0.1 7 5 3 2 7 5 3 2 7 5 3 - -1.0 - -10 0- -0.2 --0.4 --0.6 --0.8 --1.0 --1.4 - -1.2 0.1 2 7 5 3 2 2 7 5 3 1.0 10 it12888 v gs =0v v ds = -- 10v 75 c 25 c t a= --25 c - -25 c 25 c t a=75 c - -0.01 --0.1 23 57 23 57 2 3 57 - -1.0 --10 t a=25 c single pulse mounted on a ceramic board (1500mm 2 ? 0.8mm) 1unit t otal dissipation
FW349 no.8750-6/6 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of august, 2007. specifications and information herein are subject to change without notice. note on usage : since the FW349 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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